| Research Title |
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Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Article In Journal |
1435 |
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Photoelectrical characterization of a new generation diode having GaFeO3 interlayer Photoelectrical characterization of a new generation diode having GaFeO3 interlayer
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
Article In Journal |
1435 |
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The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode
NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA |
Article In Journal |
1433 |
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Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure
NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA |
Article In Journal |
1433 |
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